cmt04n60 power mosfet 2011/03/23 rev. 1.5 champion microelectronic corporation page 1 general description features this advanced high voltage mosfet is designed to withstand high energy in the avalanche mode and switch efficiently. this new high energy device also offers a drain-to-source diode with fast recovery time. designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. ? higher current rating ? lower rds(on) ? lower capacitances ? lower total gate charge ? tighter vsd specifications ? avalanche energy specified pin configuration symbol to-220/to-220fp front view 1 23 gate drain source to-252 front view d s g n-channel mosfet absolute maximum ratings rating symbol value unit drain to current continuous pulsed i d i dm 4.0 14 a gate-to-source voltage continue non-repetitive v gs v gsm 30 40 v v total power dissipation to-220 to-220fp p d 83 30 w operating and storage te mperature range t j , t stg -55 to 150 single pulse drain-to-source avalanche energy t j = 25 (v dd = 100v, v gs = 10v, i l = 4a, l = 10mh, r g = 25 ? ) e as 80 mj thermal resistance junction to case junction to ambient jc ja 1.30 100 /w maximum lead temperature for soldering pu rposes, 1/8? from case for 10 seconds t l 260
cmt04n60 power mosfet 2011/03/23 rev. 1.5 champion microelectronic corporation page 2 ordering information part number package cmt04n60gn220* to-220 cmt04n60xn220* to-220 cmt04n60gn220fp* to-220 full package cmt04n60xn220fp* to-220 full package CMT04N60GN252* to-252 cmt04n60xn252* to-252 *note: g : suffix for pb free product x : suffix for halogen and pb free product electrical characteristics (unless otherwise specified, t j = 25 .) cmt04n60 characteristic symbol min typ max units drain-source breakdown voltage (v gs = 0 v, i d = 250 a) v (br)dss 600 v drain-source leakage current (v ds =600 v, v gs = 0 v) i dss 1 ua gate-source leakage current-forward (v gsf = 30 v, v ds = 0 v) i gssf 100 na gate-source leakage current-reverse (v gsr = - 30 v, v ds = 0 v) i gssr 100 na gate threshold voltage (v ds = v gs , i d = 250 a) v gs(th) 2.0 4.0 v static drain-source on-resistance (v gs = 10 v, i d = 2.0a) * r ds(on) 2.2 ? forward transconductance (v ds = 50 v, i d = 2.0 a) * g fs 2.5 mhos input capacitance c iss 540 760 pf output capacitance c oss 125 180 pf reverse transfer capacitance (v ds = 25 v, v gs = 0 v, f = 1.0 mhz) c rss 8.0 20 pf turn-on delay time t d(on) 12 20 ns rise time t r 7.0 10 ns turn-off delay time t d(off) 19 40 ns fall time (v dd = 300 v, i d = 4.0 a, v gs = 10 v, r g = 9.1 ? ) * t f 10 20 ns total gate charge q g 5.0 10 nc gate-source charge q gs 2.7 nc gate-drain charge (v ds = 480 v, i d = 4.0 a, v gs = 10 v)* q gd 2.0 nc internal drain inductance (measured from the drain lead 0.25? from package to center of die) l d 4.5 nh internal drain inductance (measured from the source lead 0.25? from package to source bond pad) l s 7.5 nh source-drain diode characteristics forward on-voltage(1) v sd 1.5 v forward turn-on time t on ** ns reverse recovery time (i s = 4.0 a, d is /d t = 100a/ s) t rr 655 ns * pulse test: pulse width Q 300 s, duty cycle Q 2% ** negligible, dominated by circuit inductance
cmt04n60 power mosfet 2011/03/23 rev. 1.5 champion microelectronic corporation page 3 typical characteristics
cmt04n60 power mosfet 2011/03/23 rev. 1.5 champion microelectronic corporation page 4
cmt04n60 power mosfet 2011/03/23 rev. 1.5 champion microelectronic corporation page 5 to-220
cmt04n60 power mosfet 2011/03/23 rev. 1.5 champion microelectronic corporation page 6 package dimension to-220 to-220fp
cmt04n60 power mosfet 2011/03/23 rev. 1.5 champion microelectronic corporation page 7 to-252
cmt04n60 power mosfet 2011/03/23 rev. 1.5 champion microelectronic corporation page 8 important notice champion microelectronic corporation (cmc) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its cust omers to obtain the latest version of relevant inform ation to verify, before placing orders, that the information being relied on is current. a few applications using integrated circuit products may involv e potential risks of death, personal injury, or severe property or environmental damage. cmc integrated ci rcuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. us e of cmc products in such applications is understood to be fully at the risk of the cust omer. in order to minimize risks associated with the customer?s applications, th e customer should provide adequate design and operating safeguards. hsinchu headquarter sales & marketing 5f, no. 11, park avenue ii, science-based industrial park, hsinchu city, taiwan 21f., no. 96, sec. 1, sintai 5th rd., sijhih city, taipei county 22102, taiwan r.o.c t e l : +886-3-567 9979 t e l : +886-2-2696 3558 f a x : +886-3-567 9909 f a x : +886-2-2696 3559
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